
Tarun Kumar Sharma
Tarun's primary research interests lie in the area of semiconductor physics with a particular onus on optimising the... | Indore, Madhya Pradesh, India
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Tarun Kumar Sharma’s Emails sh****@rr****.gov
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Tarun Kumar Sharma’s Location Indore, Madhya Pradesh, India
Tarun Kumar Sharma’s Expertise Tarun's primary research interests lie in the area of semiconductor physics with a particular onus on optimising the performance of semiconductor devices like laser diodes, LEDs, PIN Photodiodes, Schottky didoes, HEMT, sensors and solar cells. His recent research interests are in the domain of quantum technologies and spin-photonics. He has produced >200 journal papers and conference proceedings in this area including a few invited papers. He has been working on the epitaxial growth of quantum structures using MOVPE & MBE and subsequent characterization using spectroscopic, x-ray and electrical probes. Recent topics include: * Quantum Technologies * GaN based HEMT devices * AlGaN/GaN heterostructures for deep UV emitters and detectors. * Nitride laser diodes/LEDs * MOVPE & MBE growth of Nitride Semiconductors * Semiconductor Quantum structures (wells and dots) for device applications * MOVPE growth of conventional III-V semiconductors (Quantum wells/wires/dots) * Spin-photonics applications Tarun's specialties: Prof. Tarun Sharma is a semiconductor physicist. He has about 25 years of research experience in conventional arsenides/phosphides,antimonides,ZnO/MgZnO and Nitrides etc. He has mastered the art of high quality epitaxial growth that has enabled him to observe several important physical phenomenon in semiconductor quantum structures. Tarun's students are trained in the following areas: * Quantum Technologies * Epitaxial growth of Semiconductor heterostructures including Quantum wells, wires and dots. * Spectroscopic characterization of epitaxial layers (PL/PLE/PR/CER/SPS/FTIR-SPS) * Electronic transport characterization of epitaxial layers (Hall, IV, CV, ECV, DLTS) * HRXRD characterization of epitaxial layers (data acquision and simulation) * Device Fabrication (Photolithography, Metallization by e-beam and thermal, Dielectric coating by PECVD and sputtering, Dry and wet etching, Wire and Die bonding, Scribing, Device testing) Epitaxial growth and Device fabrication are carried out under class 100/1000/10000 clean room conditions. Students are trained to work in semiconductor clean rooms.
Tarun Kumar Sharma’s Current Industry Homi Bhabha National Institute
Tarun
Kumar Sharma’s Prior Industry
Bhabha Atomic Research Centre
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Raja Ramanna Centre For Advanced Technology
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Tata Institute Of Fundamental Research
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Ferdinand Braun Institut Leibniz Institut Fur Hochstfrequenztechnik
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University Of Surrey
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Homi Bhabha National Institute Mumbai
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Carnegie Mellon University
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Homi Bhabha National Institute
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Work Experience

Homi Bhabha National Institute
Professor
Sun Oct 01 2017 00:00:00 GMT+0000 (Coordinated Universal Time) — Present
Raja Ramanna Centre For Advanced Technology
Scientist (So/H)
Sun Oct 01 2017 00:00:00 GMT+0000 (Coordinated Universal Time) — Present
Homi Bhabha National Institute
Associate Professor
Sun Jul 01 2012 00:00:00 GMT+0000 (Coordinated Universal Time) — Present
Raja Ramanna Centre For Advanced Technology
Scientist (So/G)
Sun Jul 01 2012 00:00:00 GMT+0000 (Coordinated Universal Time) — Sun Oct 01 2017 00:00:00 GMT+0000 (Coordinated Universal Time)
Carnegie Mellon University
Research Scholar
Sun Feb 01 2009 00:00:00 GMT+0000 (Coordinated Universal Time) — Sat Jan 01 2011 00:00:00 GMT+0000 (Coordinated Universal Time)
Homi Bhabha National Institute Mumbai
Asst. Prof.
Wed Aug 01 2007 00:00:00 GMT+0000 (Coordinated Universal Time) — Fri Jun 01 2012 00:00:00 GMT+0000 (Coordinated Universal Time)
Raja Ramanna Centre For Advanced Technology
Scientist (So/F)
Wed Aug 01 2007 00:00:00 GMT+0000 (Coordinated Universal Time) — Fri Jun 01 2012 00:00:00 GMT+0000 (Coordinated Universal Time)
University Of Surrey
Visiting Scholar
Fri Jun 01 2007 00:00:00 GMT+0000 (Coordinated Universal Time) — Sat Sep 01 2007 00:00:00 GMT+0000 (Coordinated Universal Time)
Raja Ramanna Centre For Advanced Technology
Scientist (So/E)
Thu Aug 01 2002 00:00:00 GMT+0000 (Coordinated Universal Time) — Sun Jul 01 2007 00:00:00 GMT+0000 (Coordinated Universal Time)
Ferdinand Braun Institut Leibniz Institut Fur Hochstfrequenztechnik
Visiting Researcher
Sat Dec 01 2001 00:00:00 GMT+0000 (Coordinated Universal Time) — Fri Mar 01 2002 00:00:00 GMT+0000 (Coordinated Universal Time)
Ferdinand Braun Institut Leibniz Institut Fur Hochstfrequenztechnik
Visiting Researcher
Thu Feb 01 2001 00:00:00 GMT+0000 (Coordinated Universal Time) — Thu Mar 01 2001 00:00:00 GMT+0000 (Coordinated Universal Time)
Raja Ramanna Centre For Advanced Technology
Scientist (So/D)
Sat Aug 01 1998 00:00:00 GMT+0000 (Coordinated Universal Time) — Mon Jul 01 2002 00:00:00 GMT+0000 (Coordinated Universal Time)
Tata Institute Of Fundamental Research
Visiting Scientist
Tue Apr 01 1997 00:00:00 GMT+0000 (Coordinated Universal Time) — Fri Jan 01 1999 00:00:00 GMT+0000 (Coordinated Universal Time)
Raja Ramanna Centre For Advanced Technology
Scientist (So/C)
Tue Aug 01 1995 00:00:00 GMT+0000 (Coordinated Universal Time) — Wed Jul 01 1998 00:00:00 GMT+0000 (Coordinated Universal Time)
Bhabha Atomic Research Centre
Trainee
Thu Sep 01 1994 00:00:00 GMT+0000 (Coordinated Universal Time) — Tue Aug 01 1995 00:00:00 GMT+0000 (Coordinated Universal Time)